Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics

摘要

We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FDSOI) tunnel field-effect transistors (TFETs) by modulating Al2O3 fraction (25%, 50%) within atomic layer deposited HfAlOx gate dielectric. Compared to HfO2 alone, lower subthreshold swing (S.S), higher I-on,/I-off, and stronger threshold voltage (V-th) immunity against electrical stress are obtained for both n-type and p-type TFETs by adopting nano-laminated atomic layer deposited HfAlOx, attributed to the increased band gap and interfacial layer scavenging effect. (C) 2017 Elsevier B.V. All rights reserved.