机译:为TCAD仿真提取接口陷阱参数的有效方法
Univ Autonoma Barcelona, Dept Engn Elect, Edifici Q, Bellaterra 08193, Spain;
Univ Autonoma Barcelona, Dept Engn Elect, Edifici Q, Bellaterra 08193, Spain;
Univ Autonoma Barcelona, Dept Engn Elect, Edifici Q, Bellaterra 08193, Spain;
Univ Autonoma Barcelona, Dept Engn Elect, Edifici Q, Bellaterra 08193, Spain;
Univ Autonoma Barcelona, Dept Engn Elect, Edifici Q, Bellaterra 08193, Spain;
Bias temperature instability (BTI); Interface traps; Random telegraph noise (RTN); Technology computer aided design (TCAD); Variability;
机译:4H-SiC VDMOSFET高温TCAD仿真的迁移率和界面陷阱参数的校准
机译:SiC / SiO2 SiC MOSFET接口陷阱分布对TCAD模拟评估C-V测量的影响
机译:通过C-V曲线TCAD模拟评估界面陷阱类型,SIC MOSFET的能量水平和密度和密度
机译:4H-SiC VDMOSFET高温TCAD仿真的迁移率和界面陷阱参数的校准
机译:激光和等离子体Wakefield加速中电子陷阱的高效仿真。
机译:通过3D TCAD模拟FD-SOI霍尔传感器的性能优化
机译:通过低频s参数测量和基于TCaD的物理器件仿真识别微波功率alGaN / GaN HEmT中的GaN缓冲阱