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A facile approach to fabricate ZnO thin film based micro-cantilevers

机译:一种制造基于ZnO薄膜的微悬臂梁的简便方法

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摘要

In this study we report on the design, micro-fabrication and characterization of piezoelectric micro-cantilevers based on zinc oxide (ZnO) thin films. Array of micro-cantilevers are realized using silicon wet bulk micromachining process. ZnO films are very sensitive to nearly all chemicals, acids, base and even water. New unit process is developed to protect ZnO films, which utilizes wafer protection jigs. This jig allows tetra methyl-ammonium hydroxide (TMAH) wet etching on single side of wafer, while protecting active devices on the other side. Highly c-axis oriented and room temperature deposited ZnO films are utilized for micro cantilever fabrication. ZnO films used in this study have good crystalline quality with full width half maxima (FWHM) similar to 0.39 degrees, grain size similar to 80 nm and have minimal stress of similar to 41 MPa. The micro-cantilever consists of Si/SiO2/Si3N4/Al/ZnO/Al-multilayer stack for self-actuation of devices. Dynamic study is done using laser Doppler vibrometer. A customized relationship has been derived between resonance frequency and cantilever length considering multilayer structure. This inexpensive novel fabrication method provides flexibility to realize variety of other micro-electro-mechanical systems (MEMS) piezoelectric devices. The developed method is cost effective, easy, hassle free and may be preferred over deep reactive ion etching (DRIE) process. (C) 2017 Elsevier B.V. All rights reserved.
机译:在这项研究中,我们报告了基于氧化锌(ZnO)薄膜的压电微悬臂梁的设计,微制造和表征。微悬臂阵列是使用硅湿法块体微加工工艺实现的。 ZnO膜对几乎所有化学物质,酸,碱,甚至水都非常敏感。开发了一种新的单元工艺来保护ZnO膜,该工艺利用晶片保护夹具。该夹具允许在晶片的单面上进行四甲基氢氧化铵(TMAH)湿法蚀刻,同时在另一面上保护有源器件。高度c轴取向和室温沉积的ZnO薄膜用于微悬臂制造。这项研究中使用的ZnO薄膜具有良好的晶体质量,其半峰全宽(FWHM)近似于0.39度,晶粒尺寸近似于80 nm,最小应力近似于41 MPa。微悬臂由Si / SiO2 / Si3N4 / Al / ZnO / Al多层堆叠组成,用于器件的自驱动。使用激光多普勒测振仪进行动态研究。考虑到多层结构,已经得出了共振频率和悬臂长度之间的定制关系。这种廉价的新颖制造方法为实现各种其他微机电系统(MEMS)压电器件提供了灵活性。所开发的方法具有成本效益,易于操作,无麻烦的特点,并且可能比深反应离子蚀刻(DRIE)工艺更可取。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Microelectronic Engineering》 |2018年第2期|50-57|共8页
  • 作者单位

    CSIR Cent Elect Engn Res Inst, Smart Sensors Area, Pilani 333031, Rajasthan, India;

    CSIR Cent Elect Engn Res Inst, Smart Sensors Area, Pilani 333031, Rajasthan, India;

    CSIR Cent Elect Engn Res Inst, Smart Sensors Area, Pilani 333031, Rajasthan, India;

    Mody Univ, Coll Engn & Technol, Lakshmangarh 332311, Rajasthan, India;

    CSIR Cent Elect Engn Res Inst, Smart Sensors Area, Pilani 333031, Rajasthan, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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