An analytical model of the diffusive scattering of low-energy electrons in electron-beam resists

摘要

An analytical model is developed for predicting the electron penetration profile created by the low-energy exposure of electron-beam sensitive resists. The model uses a multiple forward-scattering scheme adapted by the modified age diffusion approximation to the Boltzmann transport equation to produce a computationally efficient model. Model validation is performed using the literature and experimental results. The model is used to predict low-energy electron penetration profiles formed by a micro-mechanical prototyping device.