Temperature-dependent threshold voltage analysis of surrounding/ cylindrical gate fully depleted thin film SOI MOSFET in the range 77 to 520 k

摘要

Threshold voltage analysis of surrounded gate SOI MOSFET is developed in terms of double gate and cylindrical gate MOSFETs. The temperature dependence of the threshold voltage is then studied using a Gaussian profile in the temperature range 77 to 520 k and the advantages of the surrounding gate over cylindrical and double gate SOI MOSFETs are discussed The reduced short channel effect and operation over a large temperature range makes the surrounded gate SOI MOSFET a better choice for future VLSI/ULSI application.