A three dimensional numerical algorithm for predicting temperature rise in resist with arbitrary geometry of pattern during X-ray exposure

摘要

X-ray lithography is an important technique in micro fabrication used to obtain structures and devices with a high aspect ratio. The study of thermal effects, such as temperature rise and temperature distribution, induced in resists during X-ray exposure is important for the optimization of exposure conditions. In this study, we develop a three-dimensional numerical algorithm for obtaining the steady state temperature profiles in the multilayers (resist and substrate) with arbitrary geometry of pattern on the mask in an X-ray irradiation process. Temperature rise and temperature distributions in the resist and substrate with a micro-gear pattern on the mask are obtained.