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Electrical characterization of the amorphous SiC-pSi structure

机译:非晶SiC-pSi结构的电特性

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摘要

Forward and reverse currents in the amorphous SiC/pSi structure were studied in the temperature range from 30 to 80 K. Charging of electron traps located in the SiC layer increases the forward current due to reduction of the potential barrier for holes. The current was found to be controlled by the Poole-Frenkel emission via the system of levels in the SiC layer located at 0.048 eV and 0.065 eV above the edge of the valence band.
机译:在30至80 K的温度范围内研究了非晶SiC / pSi结构中的正向和反向电流。位于SiC层中的电子陷阱的电荷由于减小了空穴的势垒而增加了正向电流。发现电流是由Poole-Frenkel发射控制的,该发射是通过在价带边缘上方0.048 eV和0.065 eV的SiC层中的能级系统进行的。

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