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Electronic properties of SiO_2/SiC interfaces

机译:SiO_2 / SiC界面的电子性质

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Oxidation of silicon carbide (SiC) provides a possibility to combine the unique electronic and thermal Properties of this semiconductor with the surface passivation attained by the natural insulating oxide SiO_2, in a similar way as it is done for silicon. However, the electron transport at the oxidized SiC surfaces is deteriorated by the SiC/oxide interface imperfections much more strongly than in the Si/SiO_2 structures. Two main contributions to the enhanced SiC/SiO_2 defect densities are revealed, including the carbon-related states and the near-interfacial oxide defects with energy levels in the SiC bandgap. These defects can be formed not only during the oxide formation or annealing. but, also, as a result of charge injection at the SiC/oxide interface which stresses the importance of the degradation effects in the SiC electronic devices.
机译:碳化硅(SiC)的氧化提供了将这种半导体独特的电子和热性能与天然绝缘氧化物SiO_2所获得的表面钝化相结合的可能性,这与对硅的处理方式相似。然而,由于SiC /氧化物界面的缺陷,与在Si / SiO_2结构中相比,电子在氧化的SiC表面上的传输被更强烈地破坏了。揭示了对增强SiC / SiO_2缺陷密度的两个主要贡献,包括碳相关态和SiC带隙中能级的近界面氧化物缺陷。这些缺陷不仅可以在氧化物形成或退火期间形成。而且,由于在SiC /氧化物界面上注入了电荷,这强调了SiC电子器件中劣化效应的重要性。

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