Investigation of SOI MOSFETs with Ultimate Thickness

摘要

Ultra-thin SOI MOSFETs with 1-5nm thick SOI film, are experimentally and theoretically investigated. Single- and double-gate configurations are compared; the double-gate MOSFET exhibits a substantial increase in transconductance, presumably resulting from volume inversion. Most of the experimental data can be explained by combining classical models with self consistent quantum calculations. The characteristics are well-behaved and reveal unique “ultra-thin” film properties f enhanced interface coupling and body-substrate coupling, degraded mobility, increased threshold voltage.