Novel mechanisms in nm-thek gate SiO_2 growth at low temperatures utilizing activated oxygen

摘要

We propose a novel technique of direct oxidation of Si surfaces using activated oxygen species which can react with Si surfaces to form SiO_2 at low temperatures (< 500 ℃). Specific oxidation mechanisms have been revealed, and the atomic level planarization at surfaces and interfaces could be achieved for the first the. Electronic properties of grown films and SiO_2/Si interfaces were characterized in detail to Show the feasibility for the application to MOSFET devices.