Oxidation of 6H-SiC(0001)

摘要

In this work we intend to determine Whether the SiO_2/6H-SiC(0001) interface is really carbon enriched. Among numerous publications dealing with 6H-SiC oxidation, our specificity resides in a simultaneous use of ultra-high vacuum surface cleaning and characterization methods (X-ray spectroscopy) and standard technological conditions for the oxidation i.e. dry oxidation at 1 atm of O_2 and a temperature of 1000℃. The oxidation of 3×3 Si-rich and 6√3x6√3R30°C-rich reconstructed surfaces is compared, taking care to transfer the samples without uncontrolled air exposures. No C-C or C-O bonds are observed at the SiO_2/SiC interface by C 1s core line analyses whatever the initial surface is. We conclude that there is no contraindication to obtain nearly ideal SiO_2/SiC interfaces on flat SiC terraces.