PHOTOELECTRON YIELD SPECTROSCOPY OF ELECTRONIC STATES AT ULTRATHIN SiO_2/Si INTERFACES

摘要

Total photoelectron yield spectroscopy (PYS) has been applied to evaluate the energy distribution of electronic defect states for ultrathin SiO_2(≤ 4.5nm)/Si(100) system. The novelty and usefulness of this technique have been demonstrated through the observation of the reduction in defect states with progressive dilute-HF treatment for such ultrathin SiO_2/Si(100) and the comparison of the PYS and the quasi-static C-V measurements for 4.5nm-thick SiO_2/Si(100).