40 years MOS technology - from empiricism to science

摘要

This paper summarizes the development of the MOS field effect technology from the early beginnings. It will deal with its empirical basis and present some examples of the way the technology progressed: the search for the ideal semiconductor-dielectric system, the continuous battle against impurities and the tenacity with Which the problem of the interaction of hydrogen with Si/SiO_2 interfacial defects has defied complete interpretation. A few highlights from the period under discussion will conclude the review.