A simple method for the evaluation of the recombination parameters in SiC MOS structures

摘要

This paper presents an analysis of non-equilibrium behavior of the room-temperature inversion layer in a SiC MOS structure. Different mechanisms responsible for recombination of the excess inversion carriers are discussed. A simple method for the evaluation of recombination lifetime in the subsurface region of SiC is proposed. The method is based on the room-temperature high-frequency CV-measurements. The limitations for the applicability of the proposed method are outlined.