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Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide

机译:SIMOX SOI完全耗尽n-MOSFET中的高温扭结效应与掩埋氧化物的偏置温度不稳定性的关联

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摘要

A high-temperature drain current "jump" in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in the SIMOX SOI MOSFETs at temperatures above 200℃ after a negative voltage is applied to the substrate. Direct link of the current "jump" with the positive charge formation in the buried oxide (BOX) has been demonstrated. The current "jump" or a front channel high-temperature kink- effect is explained by electron retrapping in the (BOX) in the vicinity of the BOX-silicon body interface.
机译:首次报道了完全耗尽的SOI n沟道MOSFET中的高温漏极电流“跳变”。在向衬底施加负电压后,在200℃以上的温度下SIMOX SOI MOSFET中会出现这种现象。已经证明了电流“跳跃”与掩埋氧化物(BOX)中正电荷形成的直接联系。当前的“跳跃”或前沟道高温扭结效应是通过电子重新捕获BOX-硅体界面附近的(BOX)来解释的。

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