Sub-band-gap impact ionization events in transient regimes of floating body SOI devices

摘要

The aim of this paper is to demonstrate via experiments and 2-D numerical simulation that in transient regimes of partially depleted (PD) SOI MOSFETs the sub-band-gap impact ionization becomes more critical compared to the static regime, and can stand for sub- 1.1V=E_Gsi/q drain voltages, in both short and long channels.