Liquid phase silylation of a bilayer resist system

摘要

0.35 μm packed and 0.20 μm isolated features have been printed with a positive acting top-surface imaging process. The process consists of a bilayer resist scheme, the top layer of which is a chemically amplified negative resist. The latter, after exposure and post-exposure bake, is silylated in the liquid phase and the latent positive images are resolved using an oxygen plasma etch.