机译:高偏置GaN 2DEG霍尔效应板中的低偏移和噪声研究了红外显微镜
Stanford Univ Dept Elect Engn Stanford CA 94305 USA|Lawrence Livermore Natl Lab Livermore CA 94550 USA;
Stanford Univ Dept Mech Engn Stanford CA 94305 USA;
Stanford Univ Dept Aeronaut & Astronaut Stanford CA 94305 USA;
Lawrence Livermore Natl Lab Livermore CA 94550 USA|Stanford Univ Dept Aeronaut & Astronaut Stanford CA 94305 USA;
Stanford Univ Dept Elect Engn Stanford CA 94305 USA;
Stanford Univ Dept Mech Engn Stanford CA 94305 USA|Frore Microsyst San Jose CA 95131 USA;
Stanford Univ Dept Elect Engn Stanford CA 94305 USA|MIT 77 Massachusetts Ave Cambridge MA 02139 USA;
Stanford Univ Dept Aeronaut & Astronaut Stanford CA 94305 USA|Infineon Technol A-9500 Villach Austria;
Stanford Univ Dept Aeronaut & Astronaut Stanford CA 94305 USA|Infineon Technol A-9500 Villach Austria;
Stanford Univ Dept Mech Engn Stanford CA 94305 USA;
Stanford Univ Dept Mech Engn Stanford CA 94305 USA;
Stanford Univ Dept Elect Engn Stanford CA 94305 USA|Stanford Univ Dept Aeronaut & Astronaut Stanford CA 94305 USA;
MODFETs; HEMTs; Gallium nitride; Silicon; Spinning; Current measurement; Sensors; Hall-effect; 2DEG; offset; current spinning; GaN; infrared; noise;
机译:几何形状对AlGaN / GaN和InAlN / GaN霍尔效应传感器的灵敏度和偏移的影响
机译:几何对AlGaN / GaN和Inaln / GaN Hall效应传感器敏感性和偏移的影响
机译:具有InGaN / GaN MQW背势垒结构的AlGaN / AlN / GaN HEMT结构的2DEG特性的数值研究
机译:2DEG通道中的低频噪声OFA1GAN / GaN异质结构缩放宽度宽度
机译:原子力显微镜(AFM)和傅里叶变换红外显微镜(FTIRM)在枪击残留物和钛锡合金纳米点研究中的应用
机译:单片低噪声和低零重力偏移CMOS / MEMS加速度计读出方案
机译:几何对AlGaN / GaN和Inaln / GaN Hall效应传感器敏感性和偏移的影响
机译:宽间隙半导体,siC和GaN的低频噪声特性研究,以及siC基功率器件,二极管和晶闸管的主要特性