首页> 外文期刊>Micro >Optimizing wafer rinsing processes to conserve DI water
【24h】

Optimizing wafer rinsing processes to conserve DI water

机译:优化晶片冲洗工艺以节省去离子水

获取原文
获取原文并翻译 | 示例
       

摘要

As the increasing demand for high-performance integrated circuits has led to more-complex device architectures, high packing densities, large die sizes, and larger wafers, there has been an accompanying need for larger volumes of chemicals and deionized (DI) water for use in the cleaning and other surface preparation steps that are critical to the semiconductor manufacturing process flow. These cleaning and rinsing steps are required to provide the necessary wafer surface quality and to isolate each process step from the others. In some fabs the DI water used for rinsing during front-end-of-line (FEOL) surface preparation (through the first contact cut) and back-end-of-line processing can total 20 million gallons or more per month.
机译:随着对高性能集成电路的日益增长的需求导致更复杂的设备架构,高封装密度,大芯片尺寸和更大的晶片,随之而来的是对使用大量化学药品和去离子水的需求。清洗和其他对半导体制造工艺流程至关重要的表面准备步骤。需要这些清洁和漂洗步骤以提供必要的晶片表面质量,并使每个处理步骤彼此隔离。在某些工厂中,用于生产线前端(FEOL)表面准备(通过第一次接触切割)和生产线后端处理期间的冲洗用水的去离子水每月总计可达到2000万加仑或更多。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号