Monitoring organics on wafer surfaces using thermal desorption GC-MSD/AED

摘要

Because their effects on semiconductor devices are numerous and destructive, organic contaminants on wafer surfaces must be monitored and controlled. It has been reported that the presence of organic contamination can change surface hydrophobicity, lower breakdown voltage, form silicon carbide, affect oxide growth and quality, cause unintentional doping, contribute to degradation haze formation, and generate post-CVD defects.