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机译:集成横向复合缓冲二极管的高反向阻断AlGaN / GaN功率整流器的仿真研究
University of Electronic Science and Technology of China, People's Republic of China;
University of Electronic Science and Technology of China, People's Republic of China;
University of Electronic Science and Technology of China, People's Republic of China;
University of Electronic Science and Technology of China, People's Republic of China;
aluminium compounds; anodes; composite materials; electric breakdown; gallium compounds; III-V semiconductors; power engineering computing; power semiconductor diodes; rectifiers; rectifying circuits; wide band gap semiconductors;
机译:具有沟槽异质结阳极的均匀低导通电压和高反向阻断AlGaN / GaN功率场效应整流器的仿真设计
机译:具有MIS门控混合阳极的高反向阻断和低启动电压AlGaN / Si-GaN侧向功率二极管
机译:通过低频S参数测量和基于TCAD的物理设备仿真识别微波功率AlGaN / GaN HEMT中的GaN缓冲阱
机译:无凹槽的AlGaN / GaN横向肖特基势垒控制肖特基整流器,具有低导通电压和高反向阻断
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:通过低频s参数测量和基于TCaD的物理器件仿真识别微波功率alGaN / GaN HEmT中的GaN缓冲阱