NEW GENERATION OF HIGHLY STABLE HIGH-TEMPERATURE MICROELECTROMECHANICAL TRANSDUCERS BASED ON A SILICON-ON-ISOLATOR HETEROSTRUCTURE

摘要

Some aspects are considered for creating a new generation of micwelectromechanical transducers based on a silicon-on-isolator heterostructure with a monolithic integral tensoframe based on analyzing physicomechanical problems that restrain an increase in the technical level of semiconductor pressure transducers for information and control systems.