High Temperature Hydrogen Sensor based on Silicon Carbide (SiC) MOS Capacitor Structure

摘要

MOS capacitor devices based on silicon carbide (SiC) are largely used as hydrogen detectors in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is analyzed by extensive simulations. The sensitivity to hydrogen detection, stability to temperature variation and dependence on interface states concentration are evaluated. The effects of structure parameters on sensor's performance are also investigated. Results show that the oxide layer type and thickness and the SiC polytype have a significant influence on the detector's performance. The proposed optimum structure for high temperature hydrogen detection is based on 3C-SiC substrate and 1Onm TiO_2 layer. In accordance with the simulations' results, three types of masks are designed for the fabrication of SiC MOS capacitor structures.