机译:考虑各向异性冲击电离的4H-SiC结势垒肖特基二极管的优化设计
Zhuzhou CSR Times Electric CO. LTD., Zhuzhou, Hunan, China,Dynex Semiconductor LTD., Doddington Road, Lincoln, UK;
Dynex Semiconductor LTD., Doddington Road, Lincoln, UK;
Dynex Semiconductor LTD., Doddington Road, Lincoln, UK;
Zhuzhou CSR Times Electric CO. LTD., Zhuzhou, Hunan, China,Dynex Semiconductor LTD., Doddington Road, Lincoln, UK;
Dynex Semiconductor LTD., Doddington Road, Lincoln, UK;
Zhuzhou CSR Times Electric CO. LTD., Zhuzhou, Hunan, China,Dynex Semiconductor LTD., Doddington Road, Lincoln, UK;
Junction Barrier Schottky Diode (JBS); Anisotropic; Impact lonization; Simulation;
机译:4H-SiC肖特基势垒二极管,结屏障肖特基二极管和引脚二极管的温度传感性能比较
机译:4H-SiC浮动结肖特基势垒二极管的结构和电学特性的研究与优化仿真
机译:4H-SiC浮置肖特基势垒二极管的结构和电学特性的研究与优化仿真
机译:具有几乎相同的肖特基势垒高度的1.2kV,100A,4H-SiC(0001)和(000-1)结势垒肖特基二极管的制造
机译:4H碳化硅中的单片集成功率JFET和结势垒肖特基二极管。
机译:具有4H-SIC肖特基二极管的60-700 k CTAT和PTAT温度传感器
机译:4H-SiC(0001)外延层中向内生长的堆叠缺陷的表征及其对高压肖特基势垒二极管的影响