机译:A1N钝化对蓝宝石衬底AlGaN / GaN高电子迁移率晶体管热性能的影响:仿真研究
Department of Electronics and Communication Engineering Anil Neerukonda Institute of Technology & Sciences Visakhapatnam India;
Department of Electronics and Communication Engineering Karunya Institute of Technology and Sciences Coimbatore Tamil Nadu India;
Department of Electrical and Electronic Engineering Jashore University of Science and Technology Jashore 7408 Bangladesh;
School of Engineering Cardiff University Wales United Kingdom;
Department of Electronics and Communication Engineering SR University Warangal Telangana India;
Department of Electronics and Communication Engineering Karunya Institute of Technology and Sciences Coimbatore Tamil Nadu India;
Department of Electronics and Communication Engineering Anil Neerukonda Institute of Technology & Sciences Visakhapatnam India;
Self-heating; Lattice temperature; AlN; Thermal management; Sapphire; DC characteristics;
机译:深能级瞬态光谱法研究AlGaN / GaN高电子迁移率晶体管的SiN / SiO_2表面钝化对Si衬底的影响
机译:深层瞬态光谱法研究Algan / GAN高电子迁移率晶体管的Sin / Sio_2钝化表面对Si基质的影响
机译:表面钝化 BY 的AlGaN / GaN 高电子 迁移率晶体管 Si基 BY 深能级瞬态谱 法 SIN / SIO_2 影响
机译:在8英寸硅(111)基板上生长的凹陷 - 栅极AlGaN / GaN金属氧化物半导体高电子迁移率晶体管的稀释KOH钝化性能改进
机译:Algan / GaN高电子迁移率晶体管通过热仿真和子带隙光学泵浦的可靠性研究
机译:具有铜填充结构的AlGaN / GaN高电子迁移率晶体管的热分析和工作特性:仿真研究
机译:通过热蒸发siO钝化提高alGaN / alN / GaN高电子迁移率晶体管的性能