Efficiency of commercial Cz-Si solar cell with a shallow emitter

摘要

The increase of a commercial solar cell performance implies an improvement in the different processes in the industrial production. In order to know the main limitations in the efficiency of Czocharalski-Si (Cz-Si) photovoltaic cells, the loss distribution was studied by means of external quantum efficiency, I-V measurements and PC-1D simulation in the current device. One of the most relevant losses is due to recombination in the emitter. The emitters with a low resistance (40 Ω/□) and a deep pn-junction, display a considerable loss ratio. Shallower emitters (80Ω/□) with low doping density and a new paste for the front side result in a relative improvement in cell efficiency of 3.5%.