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Effect of presintering on the dielectric and mechanical properties of porous reaction-bonded silicon nitride

机译:预烧结对多孔反应结合氮化硅介电和力学性能的影响

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This paper presents the influence of presintering on the dielectric and mechanical properties of porous silicon nitride ceramics which were prepared by reaction sintering in flowing nitrogen atmosphere. Si_3N_4 ceramics containing 0.8 mm spherical pores in diameter and with porosity of about 53% were made by adding 30% in mass pore-forming agent grains prepared by spray prilling. Green bodies were subjected to presintering in vacuum atmosphere at temperature 1250 ℃ and then sintered. The experimental results demonstrate that the dielectric constant ε' and the dielectric loss tan S have small increase but the flexure strength of the samples increase evidently with increase in holding time of presintering. When presintered with 5% in mass additives of Y_2O_3 and Al_2O_3, ε' reduce evidently, but tan δ increases all the time with increase in holding time of presintering, and different phases and microstructures are formed with change of holding time of presintering.
机译:本文介绍了预烧结对在流动氮气氛中通过反应烧结制备的多孔氮化硅陶瓷的介电和力学性能的影响。通过添加通过喷雾造粒制备的质量成孔剂颗粒的30%,来制造具有0.8mm球形孔直径和约53%的孔隙率的Si_3N_4陶瓷。将生坯在真空气氛中于1250℃的温度下进行预烧结,然后进行烧结。实验结果表明,随着预烧结保温时间的增加,介电常数ε'和介电损耗tan S增大幅度较小,但样品的抗弯强度明显增加。当用质量分数为5的Y_2O_3和Al_2O_3进行预烧结时,ε'明显降低,但tanδ随预烧结保持时间的增加而一直增加,并且随着预烧结保持时间的变化而形成不同的相和微观结构。

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