Twinning interactions induced amorphisation in ultrafine silicon grains

摘要

Detailed transmission electron microscopy analysis on a severely deformed Al-Si composite material has revealed that partial dislocation slips and deformation twinning are the major plastic deformation carriers in ultrafine silicon grains. This resembles the deformation twinning activities and mechanisms observed in nano-crystalline face-centred-cubic metallic materials. While deformation twinning and amorphisation in Si were thought unlikely to co-exist, it is observed for the first time that excessive twinning and partial dislocation interactions can lead to localised solid state amorphisation inside ultrafine silicon grains.