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Synthesis of an extremely stable ceramic in the system Si/B/C/N using 1-(trichlorosilyl)-1-(dichloroboryl )ethane as a single-source precursor

机译:以1-(三氯甲硅烷基)-1-(二氯硼烷基)乙烷为单源前驱体在Si / B / C / N体系中合成极其稳定的陶瓷

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摘要

A new material discovered in the Si/B/C/N system was found to remain in the amorphous state up to a very high temperature of 2000 deg.C. This material, with the composition Si2B2N5C4, is the only material in this system which does not undergo any microstructural changes until such high temperatures. Furthermore, the substance shows an extremely high resistance to oxida- tion up to 1500 deg. C. The synthesis of amorphous SizBzNsC4 was achieved by using the novel single- source precursor I -(trichlorosilyl)- l -(dichloroboryl)eth- ane (TSDE), which can be synthesized in high yields from inexpensive starting materials in a simple single pot reaction. Examination of the structural properties of the pyrolytic ceramic reveals a substructure consisting of tet- rahedrally and trigonally-planar coordinated silicon and boron, respectively. Si-C- and B-C-bonds present in the molecular precursor could not be distinguished from Si- N and B-N-bonds in the fully pyrolized ceramic. EDX and X-ray-diffraction showed the material to have a ho- mogeneous elemental distribution, and no phase separa- tion could be detected.
机译:在Si / B / C / N系统中发现的一种新材料,在高达2000摄氏度的高温下仍保持非晶态。这种材料的成分为Si2B2N5C4,是该系统中唯一一种只有在如此高的温度下才会发生任何微观结构变化的材料。此外,该物质在高达1500度的温度下显示出极高的抗氧化性。 C.通过使用新型单源前体I-(三氯甲硅烷基)-1--(二氯硼基)乙烷(TSDE)来实现无定形SizBzNsC4的合成,该前体可以由廉价的原料以简单的单一方式高收率地合成锅反应。对热解陶瓷的结构特性的检查揭示了分别由四面体和三角平面配位的硅和硼组成的子结构。分子前体中存在的Si-C和B-C键无法与完全热解陶瓷中的Si-N和B-N键区分开。 EDX和X射线衍射表明该材料具有均匀的元素分布,并且未检测到相分离。

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