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THE EFFECTS OF WATER VAPOR, HEATING, AND CHEMICAL AND MECHANICAL POLISHING ON MOS CAPACITORS PASSIVATED

机译:水蒸气,加热以及化学和机械抛光对钝化的MOS电容器的影响

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摘要

The capacitance and voltage (C-V) characteristics of metal oxide semicon- ductor (MOS) capacitors passivated with BaF_2-B_2O_3-GeO_2-SiO_2 and BaO- B_2O_3-GeO_2SiO_2 glasses with various OH~- radicals and the effects of water vapor, heat, and chemical and mechanical polishing on these MOS capacitors were investigated. As the OH- absorption coefficients of the glasses increased, an adverse effect on the recovery of hysteresis loops of C-V shifts was observed. An adverse effect on the hysteresis loops and V_g shifts was ob- served when the MOS capacitors were exposed to water vapor, but the hysteresis of the MOS capacitor passivated with BaF_2,-containing glass dis- appeared following heat treatment at 400deg.C for l h. When chemical and mechanical polishing was applied to the glasses in the MOS capacitors, improvements in hysteresis and V.g shifts were observed.
机译:被具有各种OH〜-基的BaF_2-B_2O_3-GeO_2-SiO_2和BaO-B_2O_3-GeO_2SiO_2玻璃钝化的金属氧化物半导体(MOS)电容器的电容和电压(CV)特性以及水蒸气,热量和研究了这些MOS电容器的化学和机械抛光。随着玻璃的OH-吸收系数增加,观察到对恢复C-V位移的磁滞回线的不利影响。当MOS电容器暴露于水蒸气时,观察到了对磁滞回线和V_g位移的不利影响,但是在400°C的温度下热处理了含有BaF_2的玻璃钝化的MOS电容器的磁滞消失了。 H。当在MOS电容器中对玻璃进行化学和机械抛光时,可以观察到磁滞和V.g位移的改善。

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