P-type tin-indium oxide films prepared by thermal oxidation of metallic InSn alloy films

摘要

P-type transparent conducting tin-indium oxide (TIO) films were successfully fabricated on quartz substrates by thermal oxidation of InSn alloy (In/Sn=0.2) films that were deposited by magnetron sputtering at room temperature (R.T.). Structural and electrical properties of TIO films were investigated. X-ray diffraction studies showed that all TIO films were polycrystalline with an orfhorhombic structure. The surface morphology of TIO films viewed by field emission scanning electron microscope (SEM) revealed that the films are composed of uniformly distributed submicron grains. Hall effect measurement results indicated that hole concentration as high as 9.61 X 10~(18) CM~(-3) was achieved. It's found that 600 deg C was the optimum thermal oxidation temperature to get p-type TIO films with highest hole concentration.