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首页> 外文期刊>Materials Letters >Room temperature near infrared luminescence of an U~(3+) doped CsCdCl_3 potential laser crystal
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Room temperature near infrared luminescence of an U~(3+) doped CsCdCl_3 potential laser crystal

机译:U〜(3+)掺杂CsCdCl_3电势激光晶体的室温近红外发光

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摘要

Good quality U~(3+) doped CsCdCl_3 single crystals with a 0.05 mol% U~(3+) concentration have been obtained by the Bridgman-Stockbarger method. Luminescence spectra of the crystals were recorded at room temperature in the near infrared range. Excitation in the range of 5f~26d~1 bands at 514 nm produced a strong emission at 1.47 and 2.35μm from the ~4F_(3/2) and ~4I_(11/2) levels to the ~4I_(9/2) ground level, respectively and at 3.15 μm from the ~4F_(3/2) level to the first excited component of the ~4I_(11/2) level. For the first time very large lifetimes of the U~(3+) luminescence levels have been observed.
机译:通过Bridgman-Stockbarger方法获得了质量良好的U〜(3+)掺杂的CsCdCl_3单晶,浓度为0.05 mol%的U〜(3+)。在室温下在近红外范围内记录晶体的发光光谱。在514 nm的5f〜26d〜1波段范围内激发产生了从〜4F_(3/2)和〜4I_(11/2)到〜4I_(9/2)的1.47和2.35μm的强发射光。从〜4F_(3/2)能级到〜4I_(11/2)能级的第一个受激分量分别为3.15μm和地平面。首次观察到非常长的U〜(3+)发光寿命。

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