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Properties of screen-printed Ho-Ba-Cu-O films on YSZ substrates

机译:YSZ基板上丝网印刷的Ho-Ba-Cu-O薄膜的特性

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High-T_c screen-printed Ho-Ba-Cu-O films were prepared on YSZ substrates by a melt processing method. The films were fired at T_s = 1000-1050℃ for 5 min and cooled to 450℃ by two steps in flowing O_2. The maximum critical current density J_c (77 K, 0 T) of 2.0 x 10~3 A cm~(-2) was only attained under much limited firing conditions; T_s = 1020℃ and cooled to 800℃ at a cooling rate of 400℃ h~(-1).
机译:通过熔融加工法在YSZ衬底上制备高T_c丝网印刷的Ho-Ba-Cu-O薄膜。将膜在T_s = 1000-1050℃下烧制5分钟,并在流动的O_2中分两步冷却至450℃。仅在非常有限的点火条件下才能达到2.0 x 10〜3 A cm〜(-2)的最大临界电流密度J_c(77 K,0 T)。 T_s = 1020℃,以400℃h〜(-1)的冷却速度冷却至800℃。

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