机译:气相外延过程中三角形GaN纳米线的生长模式控制和微拉曼表征
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
School of Advanced Materials and System Engineering, Kumoh National Institute of Technology, Yangho-dong, Cumi, Gyeongbuk 730-701, Republic of Korea;
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea;
nanomaterials; crystal growth; crystal structure;
机译:金属有机气相外延法表征Al_xga_yin_(1-x-y)材料选择性生长区域的微观拉曼光谱
机译:GaN选择区金属有机气相外延:气相扩散模型对生长速率提高的预测
机译:在20 Torr低压下金属-有机气相外延中原位光谱椭偏研究和GaN生长模式的控制
机译:金属有机气相外延法在碳面SiC上生长GaN和AlN和极性控制
机译:用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
机译:形态学控制的气相生长和一维栅极纳米线的表征和用于潜在可见光活性光催化剂的二维纳米片
机译:通过直接在连续氢化物气相外延(HVPE)过程中直接形成的多肽中间层(GaN)的自由型氮化镓(GaN)的生长