Structural and optical properties of Al-doped SnO_2 nanowires

摘要

We report a facile thermal evaporation method for the syntheses of Al-doped SnO_2 nanowires using Al-doped SnO_2 nanopartides as precursors. High-density, single-crystalline Al-doped SnO_2 nanowires were directly grown on the 6H-SiC substrates without any catalyst. X-ray diffraction patterns show that the Al dopants are incorporated into the rutile SnO_2 nanowires. The X-ray photoelectron spectra confirm the SnO_2 nanowires doped with 5 at.% Al. The photoluminescence spectra of the Al-doped SnO_2 nanowires exhibit that the large blue shift of the emission band can be observed in the Al-doped SnO_2 nanowires compared with undoped nanowires. The distortion of the crystal lattices caused by incorporation of Al atoms at the interstitials should be responsible for the large blue shift of the emission band.