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Dielectric behavior of TiO_2 ceramic prepared by plasma activated sintering

机译:等离子体活化烧结法制备TiO_2陶瓷的介电性能

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摘要

Rutile-phase TiO_2 ceramic was rapidly fabricated by plasma activated sintering (PAS) at 650-850 °C for 3 min under 30 MPa. The temperature and frequency dependences of the dielectric properties (dielectric constant and dielectric loss) for the dense TiO_2 ceramic were investigated, and the dielectric behavior was briefly discussed. It was demonstrated that extraordinarily high dielectric constant (2-5 xlO4) was observed in the whole experimental ranges of -160 to 200 ℃ and 1 kHz-1 MHz. Moreover, the dielectric loss kept a relatively normal level, however, its temperature and frequency dependences were markedly different with those of the rutile-phase TiO_2 preforms. The unusual dielectric behavior was related with the particular dielectric polarizations of the TiO_2 ceramic and its dominant form of loss under different conditions.
机译:通过在30 MPa下在650-850°C下进行3分钟的等离子体活化烧结(PAS),快速制备了金红石相TiO_2陶瓷。研究了致密TiO_2陶瓷介电性能(介电常数和介电损耗)的温度和频率依赖性,并简要讨论了介电性能。结果表明,在-160至200℃和1 kHz-1 MHz的整个实验范围内观察到了极高的介电常数(2-5 xlO4)。此外,介电损耗保持在相对正常的水平,然而,其温度和频率依赖性与金红石相TiO_2预成型体的温度和频率依赖性显着不同。异常的介电行为与TiO_2陶瓷的特殊介电极化及其在不同条件下的主要损耗形式有关。

著录项

  • 来源
    《Materials Letters》 |2011年第24期|p.3468-3471|共4页
  • 作者单位

    State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University. Xi'an 710049, China;

    State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University. Xi'an 710049, China;

    State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China;

    State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University. Xi'an 710049, China;

    State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University. Xi'an 710049, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    tio_2; dielectric properties; microstructure; density; plasma activated sintering;

    机译:tio_2;介电性能微观结构密度;等离子活化烧结;

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