Improved efficiency of ferroelectric Pb(Zr, Ti)O-3 (PZT) based photovoltaic device with colloidal quantum dots

摘要

Ferroelectric Pb(Zr, Ti)O-3 (PZT) thin films and PbS quantum dots (QDs) hybrid device are made for photovoltaic application, using a solution based fabrication process. The wide band gap of ferroelectric PZT can enable a high open circuit voltage. The colloidal PbS quantum dot provides a tailored absorption spectrum and an excellent light harvesting property, resulting in increased short circuit current. We present a hybrid photovoltaic device based on PZT thin film with a PbS quantum dot layer. With a combination of PZT and PbS QDs, the short circuit current has increased by 8000 times, while maximizing the open circuit voltage. The overall power conversion efficiency was 0.75% and this is more than 50 times higher than a PZT film only photovoltaic device. (C) 2016 Elsevier B.V. All rights reserved.