机译:不同温度下a-Si:H / c-Si p-i-n结构中与功率有关的横向光伏效应
Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China;
Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China;
Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China;
Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China;
Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China;
Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China;
Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China;
Amorphous silicon; Schottky barrier; Optical materials and properties; Photovoltaic effect; Optical detectors;
机译:借助偏压在a-Si:H / c-Si p-i-n结构中与距离无关的横向光伏效应
机译:μc-SiO_x:H / a-Si:H / c-Si p-i-n结构中的大横向光伏效应
机译:借助偏压在a-Si:H / c-Si p-i-n结构中产生较大的横向光伏效应
机译:n〜+ / i和p〜+ / i a-Si:H结的性质以及p〜+ / in /μc-Si和n〜+ / i /μc-Si结构的光伏效应
机译:硅基异质结的电子性质研究:a-Si:H / c-Si和GaP / Si异质结的第一个原理研究
机译:通过形成包含Si量子点/ SiC多层膜的p-i-n结构来增强光伏性能
机译:(a-Si:H / µc-Si:H)异质结太阳能电池的研究和数值模拟。 ud ud异质结太阳能电池(a-Si:H / µc-Si:H
机译:大面积1-D a-sI:H p-I-N薄膜位置敏感探测器的横向光效仿真