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A method for optimizing the electrical conductivity of Al:ZnO TCO films

机译:一种优化Al:ZnO TCO薄膜电导率的方法

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In this paper, we propose a new strategy for optimizing the conductivity of AZO (ZnO: Al) thin films as transparent conductive oxide (TCOs) based on adapting the atomic percentage of the dopant to the precursor sol concentration. A comparison between the electrical current of pure ZnO and AZO thin films indicated that, the increase in molar concentration of ZnO solution and percentage of Aluminum, respectively up to 1 M and 2 at.%, increased the charge carrier concentration continuously. But a little more increase in both of them actually decreased the conduction. Optical behavior of thin films showed blue shifts in the optical band gap that could be explained by the Burstein-Moss effect and Brus equation. The lattice stress and crystal size of thin films showed that Al+3 ions were properly localized in the ZnO structure prepared with 1 M concentration at 2 at.% Al. (C) 2017 Elsevier B. V. All rights reserved.
机译:在本文中,我们提出了一种新的策略,可以根据掺杂剂的原子百分数适应前体溶胶浓度,优化作为透明导电氧化物(TCO)的AZO(ZnO:Al)薄膜的电导率。纯ZnO和AZO薄膜的电流比较表明,ZnO溶液的摩尔浓度和铝含量分别增加到1 M和2 at。%会不断增加电荷载流子浓度。但是两者的增加实际上降低了传导。薄膜的光学行为显示出光学带隙中的蓝移,这可由Burstein-Moss效应和Brus方程解释。薄膜的晶格应力和晶体尺寸表明,Al + 3离子正确定位在以1 at浓度和2 at。%Al制备的ZnO结构中。 (C)2017 Elsevier B.V.保留所有权利。

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