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首页> 外文期刊>Materials Focus >The Impact of Alkyl Phosphonic Acid Monolayer Modified Dielectrics on the Performance of n-Channel Organic Thin-Film Transistors
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The Impact of Alkyl Phosphonic Acid Monolayer Modified Dielectrics on the Performance of n-Channel Organic Thin-Film Transistors

机译:烷基膦酸单层改性电介质对N沟道有机薄膜晶体管性能的影响

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摘要

This study reported on the effect of the carbon chain length in alkyl phosphonic acid self-assembled monolayers on the performance of N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylicdiimide (PTCDI-C-13) based n-channel organic thin film transistors. A trend of improving performance was observed with the increasing chain length of the self-assembled monolayer on the SiO2 dielectric. Mobility as high as 0.35 cm(2)/Vs and on/off current ratio of larger than 105 were achieved. These transistors are good candidates to match with p-channel pentacene organic thin film transistors to realize organic complementary metal oxide semiconductor circuits. The devices demonstrated no dependency on the alkyl chain length when tested in air.
机译:本研究报道了碳链长度在烷基膦酸的自组装单层中的作用对N,N'-二氮基-3,4,9,10-二萜羧酸二酰亚胺(PTCDI-C-13)的N沟道的性能有机薄膜晶体管。利用SiO2电介质上的自组装单层的链条增加,观察到改善性能的趋势。实现高达0.35厘米(2)/ vs和ON / OFF电流比的移动性大于105。这些晶体管是与P沟道五烯有机薄膜晶体管匹配的良好候选,以实现有机互补金属氧化物半导体电路。当在空气中测试时,该装置没有对烷基链长度的依赖性。

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