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Physical Properties Of Cvd Boron-doped Multiwalled Carbon Nanotubes

机译:Cvd硼掺杂多壁碳纳米管的物理性质

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The effects of boron doping and electron correlation on the transport properties of CVD boron-doped multiwalled carbon nanotubes are reported. The boron-doped multiwalled carbon nanotubes were characterized by TEM as well as Raman spectroscopy using different laser excitations (viz. 488, 514.5 and 647 nm). The intensity of the D-band laser excitation line increased after the boron incorporation into the carbon nanotubes. The G-band width increased on increasing the boron concentration, indicating the decrease of graphitization with increasing boron concentration. Electrical conductivity of the undoped and boron-doped carbon nanotubes reveal a 3-dimensional variable-range-hopping conductivity over a wide range of temperature, viz. from room temperature down to 2 K. The electrical conductivity is not found to be changed significantly by the present levels of B-doping. Electron Paramagnetic Resonance (EPR) results for the highest B-doped samples showed similarities with previously reported EPR literature measurements, but the low concentration sample gives a very broad ESR resonance line.
机译:报道了硼掺杂和电子相关性对CVD掺杂硼的多壁碳纳米管传输特性的影响。使用不同的激光激发(488、514.5和647 nm)通过TEM以及拉曼光谱对掺硼多壁碳纳米管进行表征。硼掺入碳纳米管后,D带激光激发线的强度增加。随着硼浓度的增加,G带宽度增加,表明石墨化随着硼浓度的增加而减小。未掺杂和掺杂硼的碳纳米管的电导率显示出在很宽的温度范围内的3维可变范围跳跃电导率。从室温降至2K。目前的B掺杂水平并未发现电导率有明显变化。最高B掺杂样品的电子顺磁共振(EPR)结果与以前报道的EPR文献测量结果相似,但低浓度样品给出了非常宽的ESR共振线。

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