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Enhancement of electrical resistivity of Sr_(0.5)Ba_(0.5)Fe_(12)O_(19) nanomaterials by doping with lanthanum and nickel

机译:镧和镍掺杂增强Sr_(0.5)Ba_(0.5)Fe_(12)O_(19)纳米材料的电阻率

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摘要

From the viewpoint of electronic and telecommunication devices, the electrical resistivity is required to be high to curb the eddy current losses for efficient performance at high frequencies. In the present work, Sr_(0.5)Ba_(0.5)Fe_(12)O_(19) hexaferrite has been doped with a binary mixture of lanthanum and nickel using chemical co-precipitation method of synthesis. The crystallite size of the synthesized samples is estimated in the range of 36-58 nm and their structural analyses have confirmed a single magnetoplumbite phase. The magnitude of the dc-electrical resistivity is enhanced, by almost 100 times, but Curie temperature (T_C) is reduced by doping with La-Ni, which has been explained on the basis of the exchange interactions. In addition, the doped samples exhibit very low dielectric constant (ε = 11-13) and low dielectric loss tangent (tan δ = 0.07-0.10) determined at a frequency of 1 MHz. These characteristics may be suitable for their potential application in electromagnetic attenuation materials and microwave devices.
机译:从电子和电信设备的观点来看,要求电阻率较高以抑制涡流损耗,以便在高频下实现有效性能。在目前的工作中,使用化学共沉淀法用镧和镍的二元混合物掺杂了Sr_(0.5)Ba_(0.5)Fe_(12)O_(19)六价铁氧体。估计合成样品的微晶尺寸在36-58 nm范围内,并且它们的结构分析已经证实了单个磁铅石相。直流电阻率的幅度提高了近100倍,但是通过掺杂La-Ni降低了居里温度(T_C),这已经在交换相互作用的基础上进行了解释。此外,掺杂样品在1 MHz频率下表现出非常低的介电常数(ε= 11-13)和低介电损耗正切(tanδ= 0.07-0.10)。这些特性可能适合其在电磁衰减材料和微波设备中的潜在应用。

著录项

  • 来源
    《Materials Chemistry and Physics.》 |2009年第3期|308-313|共6页
  • 作者单位

    Surface and Solid State Chemistry Laboratory, Department of Chemistry, Quaid-i-Azam University, Islamabad 45320, Pakistan;

    Surface and Solid State Chemistry Laboratory, Department of Chemistry, Quaid-i-Azam University, Islamabad 45320, Pakistan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    semiconductors; annealing; dielectric properties; electrical properties;

    机译:半导体;退火;介电性能电性能;
  • 入库时间 2022-08-18 00:39:48

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