Synthesis, characterization, photoluminescence and field emission properties of novel durian-like gallium nitride microstructures

摘要

Durian-like gallium nitride (GaN) microstructures were successfully synthesized on Si substrate by pre-treating Ga metal with aqueous NH_3 via catalyst assisted chemical vapor deposition (CVD) method at 1200℃. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). XRD and EDX analysis revealed that durian-like GaN is pure and single phase. SEM results showed that the size of the durian-like GaN structures was 20-25 μm. GaN microstructures exhibited reasonable field emission properties with the turn-onfieldof8.24Vμm~(-1) (0.01 mAcm~(-2))and threshold field of 10.18Vμm~(-1) (1 mA cm~(-2)) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro-electronic devices. Photoluminescence (PL) properties of durian-like GaN studied at room temperature showed a strong near-band-edge emission at 369.4 nm (3.36 eV) whereas at low temperature it showed near-band-edge emission at 364.2 nm (3.4 eV) without yellow band emissions. The photoluminescence properties showed that it has also potential application in light-emitting devices.