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Role of surface stoichiometry on the interfacial electron behavior at Ni/TiO_2(0 01) interfaces

机译:表面化学计量对Ni / TiO_2(0 01)界面电子行为的影响

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摘要

The interfacial properties of Ni clusters grown on the stoichiometric and reduced rutile TiO_2(001) surfaces were investigated by means of X-ray photoelectron spectroscopy (XPS). The binding energies (BE's) of elements from both overlayers and substrates were found to be affected by the formation of interfacial dipole. Regardless of the TiO_2 surface stoichiometry, the Ni 2p_(3/2) BE's move monotonically toward lower value with the increase of Ni thickness due to the cluster size effect. However, the Ni 2p_(3/2) BE shift is much smaller on reduced TiO_2(0 01) surfaces compared to that on the annealed stoichiometric surface. For stoichiometric and lightly reduced TiO_2 surfaces, O 1s BE's exhibit an unexpected upward shift with increasing Ni thickness below 2 A, and then downward shift to lower BE's when the Ni thickness increases further. This opposite tendency is attributed to the insulator-to-metal transition. On heavily reduced surface, only monotonically downward shiftofthe O 1s BE's was observed with the increase of Ni thickness. The different behaviors are well elucidated by collective contributions of interfacial charge transfer and image charge effect.
机译:利用X射线光电子能谱(XPS)研究了化学计量和还原金红石型TiO_2(001)表面上生长的Ni团簇的界面性质。发现来自覆盖层和衬底的元素的结合能(BE's)受界面偶极子形成的影响。不论TiO_2表面化学计量如何,由于团簇尺寸效应,Ni 2p_(3/2)BE随Ni厚度的增加而单调向较低值移动。但是,与退火的化学计量表面相比,还原的TiO_2(0 01)表面的Ni 2p_(3/2)BE位移要小得多。对于化学计量的和轻度还原的TiO_2表面,O 1s的BE会出现意外的向上偏移,当Ni厚度低于2 A时会增加,然后当Ni的厚度进一步增加时会向下偏移至较低的BE。这种相反的趋势归因于绝缘体到金属的过渡。在大量还原的表面上,仅观察到O 1s BE随Ni厚度的增加而单调向下移动。界面电荷转移和图像电荷效应的共同贡献很好地阐明了不同的行为。

著录项

  • 来源
    《Materials Chemistry and Physics》 |2012年第3期|871-875|共5页
  • 作者单位

    Department of Physics, University of South Florida, Tampa, FL 33620, USA,Division of Physics and Applied Physics, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore;

    Institute of Materials Research and Engineering, A*STAR, 3 Research Link, Singapore 117602, Singapore;

    Institute of Materials Research and Engineering, A*STAR, 3 Research Link, Singapore 117602, Singapore;

    Division of Physics and Applied Physics, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    C. Photoelectron spectroscopy; TiO_2; Ni; Surface chemistry;

    机译:C.光电子能谱;TiO_2;你;表面化学;
  • 入库时间 2022-08-18 00:39:38

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