机译:掺杂浓度对掺硼非晶硅和纳米晶硅膜微结构和光电性能的影响
Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;
Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;
Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;
Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;
Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;
A. Semiconductors; A. Nanostructures; B. Annealing; D. Electrical properties;
机译:沉积压力对通过热线化学气相沉积法生长的B掺杂氢化纳米晶硅(nc-Si:H)薄膜的微结构和光电性能的影响
机译:不同掺杂浓度下多孔硅衬底上生长的硼掺杂纳米晶金刚石膜的研究
机译:硼掺杂对电子束蒸发原位掺杂非晶硅薄膜固相结晶的影响
机译:磷和硼掺杂作用对氢化无定形和纳米晶混合相硅薄膜中的纳米晶体形成
机译:掺杂和未掺杂的氢化非晶硅薄膜中纳米晶硅夹杂物的影响。
机译:未掺杂和硼掺杂纳米晶金刚石薄膜的摩擦学性质
机译:不同掺杂浓度下多孔硅衬底上掺硼纳米金刚石薄膜的研究