首页> 外文期刊>Materials Chemistry and Physics >Thermoluminescence of Tb doped Gd2O2S phosphor
【24h】

Thermoluminescence of Tb doped Gd2O2S phosphor

机译:掺b的Gd2O2S荧光粉的热致发光

获取原文
获取原文并翻译 | 示例
       

摘要

Thermoluminescence (TL) of gadolinium oxysulfide activated with terbium (Gd2O2S:Tb) is investigated. The glow curves of Gd2O2S:Tb phosphor recorded in the temperature range of 93-500 K with a heating rate of 0.52 K s(-1) shows five prominent glow peaks. Comparison of the glow curves exhibited by different samples prepared with varying firing conditions reveals some interesting results. In this phosphor capture centers are mainly formed due to variable valency activators, trace impurities and point defects, which create defects in the sub-lattice. The observed TL spectra suggest a multiplicity of electron and hole traps. The main peak that observed at 150 K is attributed to point defects arising out of sulfur vacancies. These vacancies give rise to electron traps, which are found to be associated with terbium centers. This is confirmed by the monochromatic glow curves observed at wavelengths corresponding to the characteristic terbium emission (D-5(3)-F-7(n), D-5(4)-F-7(n)). Removal of this glow peak under H2S firing indicates the localized character of the concerned centers. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 18]
机译:研究了用activated(Gd2O2S:Tb)活化的氧硫化的热致发光(TL)。在93-500 K的温度范围内以0.52 K s(-1)的加热速率记录的Gd2O2S:Tb荧光粉的辉光曲线显示了五个突出的辉光峰。比较在不同烧成条件下制备的不同样品所呈现的辉光曲线显示了一些有趣的结果。在这种荧光体中,捕获中心的形成主要是由于化合价活化剂,痕量杂质和点缺陷,这些缺陷会在亚晶格中产生缺陷。观察到的TL光谱表明存在多个电子陷阱和空穴陷阱。在150 K处观察到的主峰归因于硫空位引起的点缺陷。这些空位引起电子陷阱,发现电子陷阱与ter中心有关。在对应于特征glow发射的波长(D-5(3)-F-7(n),D-5(4)-F-7(n))处观察到的单色辉光曲线证实了这一点。在H2S燃烧下,该辉光峰的去除表明了相关中心的局部特征。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:18]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号