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Topographical, compositional and schottky characterization of PtSi/Si schottky diodes

机译:PtSi / Si肖特基二极管的形貌,组成和肖特基特性

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PtSi ultra-thin films were grown on Si-wafer using pulsed laser deposition (PLD). As determined from X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), the compositional structures of the PtSi were discussed. Furthermore, the surface structure of these films was studied by atomic force microscopy (AFM). A possible growth mechanism is presented, on studying the variation of morphological features (i.e., roughness and size of crystallites) with annealing temperature and films thickness. In addition, by the AFM studies and schottky characterization measurements of PtSi films forming during various annealing processing, preferable preparing conditions are proposed to form the continuous and smooth PtSi thin film on Si substrate by PLD. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 13]
机译:使用脉冲激光沉积(PLD)在Si晶圆上生长PtSi超薄膜。根据X射线光电子能谱(XPS)和X射线衍射(XRD)确定,讨论了PtSi的组成结构。此外,通过原子力显微镜(AFM)研究了这些膜的表面结构。通过研究形态特征(即微晶的粗糙度和尺寸)随退火温度和膜厚度的变化,提出了一种可能的生长机理。另外,通过AFM研究和各种退火工艺中形成的PtSi膜的肖特基特性测量,提出了优选的制备条件,以通过PLD在Si衬底上形成连续且光滑的PtSi薄膜。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:13]

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