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Spray deposition of lanthanum selenide (La2Se3) thin films from non-aqueous medium and their characterizations

机译:非水介质中硒化镧(La2Se3)薄膜的喷雾沉积及其表征

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The spray pyrolysis technique was employed to prepare lanthanum selenide (La2Se3) thin films on ordinary glass and fluorine doped tin oxide (FTO) coated glass substrates under optimized conditions. The preparative parameters are optimized to get good quality of La2Se3 thin films. X-ray diffraction (XRD) study reveals that only cubic La2Se3 is formed with a grain size of about 42 nm. The direct optical band gap is estimated to be 2.6 eV. The dispersions of dielectric constant and dielectric loss are studied with the variation of frequency. The room temperature electrical resistivity of the films is found to be of the order of 10(5) Omega cm. The film is found to be a p-type semiconductor. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 12]
机译:采用喷雾热解技术在最佳条件下在普通玻璃和氟掺杂氧化锡(FTO)涂层玻璃基板上制备硒化镧(La2Se3)薄膜。优化了制备参数,以获取高质量的La2Se3薄膜。 X射线衍射(XRD)研究表明,仅形成立方晶La2Se3,晶粒尺寸约为42 nm。直接光学带隙估计为2.6 eV。研究了随频率变化的介电常数和介电损耗的色散。发现薄膜的室温电阻率约为10(5)Ω·cm。发现该膜是p型半导体。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:12]

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