首页> 外文期刊>Materials Chemistry and Physics >Ferromagnetic and antiferromagnetic couplings in Cr(001) thin films and TM monolayer/Cr(001) (TM = Ti, V, Cr, Mn, Fe, Co, Ni)
【24h】

Ferromagnetic and antiferromagnetic couplings in Cr(001) thin films and TM monolayer/Cr(001) (TM = Ti, V, Cr, Mn, Fe, Co, Ni)

机译:Cr(001)薄膜和TM单层/ Cr(001)(TM = Ti,V,Cr,Mn,Fe,Co,Ni)中的铁磁和反铁磁耦合

获取原文
获取原文并翻译 | 示例
       

摘要

Magnetic and electronic properties of Cr(0 0 1) thin films and transition metal monolayer (TM = Ti, V, Cr, Mn, Fe, Co, and Ni) on Cr(0 0 1) substrate are reported and discussed within the framework of first principle method based on density functional theory (DFT). In our calculations, we have considered two possible spin orientations leading to ferromagnetic (FM) and antiferromagnetic (AFM) coupling. The surface energy of Cr(0 0 1) is given and compared to experimental 4d metals values. Also, total and formation energies, total and local magnetic moments of TM/Cr(0 0 1) are determined for both ferromagnetic and antiferromagnetic configurations and compared to other works. Thus, Cr layers in Cr(0 0 1) thin films remain antiferromagnetically coupled, as in bulk Cr or Cr-2 molecule. The same behavior is found for Ti, V, and Cr in TM/Cr(0 0 1), quite the opposite, Mn, Fe, Co, and Ni prefer to be ferromagnetically coupled to Cr subsurface layer, and only Mn and Fe in the ferromagnetic coupling have induced a spin-switch in all Cr layers. We have also reported the polarized densities of states of each layer in the ground state of TM/Cr(0 0 1) systems, showing the same behavior as concluded from energy and magnetic results. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 51]
机译:报告并讨论了Cr(0 0 1)衬底上Cr(0 0 1)薄膜和过渡金属单层(TM = Ti,V,Cr,Mn,Fe,Co和Ni)的磁性和电子性质密度泛函理论(DFT)的第一原理方法的说明。在我们的计算中,我们考虑了导致铁磁(FM)和反铁磁(AFM)耦合的两种可能的自旋取向。给出了Cr(0 0 1)的表面能,并将其与4d实验金属值进行了比较。同样,确定铁磁和反铁磁结构的总能量和地层能量,TM / Cr(0 0 1)的总磁矩和局部磁矩,并将其与其他功进行比较。因此,在Cr(0 0 1)薄膜中,Cr层保持反铁磁耦合,就像在整体Cr或Cr-2分子中一样。对于TM / Cr(0 0 1)中的Ti,V和Cr具有相同的行为,相反,Mn,Fe,Co和Ni倾向于铁磁耦合至Cr地下层,而只有Mn和Fe铁磁耦合已在所有Cr层中引起自旋开关。我们还报告了在TM / Cr(0 0 1)系统的基态中每一层状态的极化密度,显示出与从能量和磁学结果得出的结论相同的行为。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:51]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号