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首页> 外文期刊>Latin America transactions >Next-generation 400 Gb/s Ethernet PMD over SMF at 1310 nm via DD-OFDM with electro-absorption modulator-based transmitters
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Next-generation 400 Gb/s Ethernet PMD over SMF at 1310 nm via DD-OFDM with electro-absorption modulator-based transmitters

机译:通过基于电吸收调制器的DD-OFDM在1310 nm上通过SMF实现下一代400 Gb / s以太网PMD

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摘要

The technical feasibility of an unamplified 4 × 100 Gb/s wavelength division multiplexed direct-detection optical OFDM system that uses electro-absorption modulators (EAM) as transmitters is numerically demonstrated for up to 10-km reach of single-mode fiber (SMF) in O-band and 800 GHz-channel spacing. Based on the use of currently available optical components, most of which were developed for the current long reach Ethernet standard, operating around 1300 nm, error-free operation (pre-FEC BER <; 3.8E-5) is achieved. The architecture here put forward represents a backward compatibility alternative that can be used to define next-generation 2and 10km 400 Gb/s Ethernet standard.
机译:以数字方式证明了在长达10公里的单模光纤(SMF)范围内使用电吸收调制器(EAM)作为发射器的未经放大的4×100 Gb / s波分复用直接检测光学OFDM系统的技术可行性。在O波段和800 GHz通道间隔。基于使用当前可用的光学组件,其中大多数是针对当前的远距离以太网标准开发的,工作在1300 nm左右,可实现无差错工作(FEC BER <; 3.8E-5之前)。这里提出的体系结构代表了向后兼容性的替代方案,可用于定义下一代2和10km 400 Gb / s以太网标准。

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